Infrared and Millimeter Waves, Volume 8: Electromagnetic Waves in Matter, Part I compiles the work of several authors while focusing on certain aspects of infrared and millimeter waves, such as sources of radiation, instrumentation, and millimeter systems. This volume discusses electromagnetic waves in matter.
The first chapter covers the properties of the dielectric materials, which is then followed by a discussion of far-infrared spectroscopy on high polymers. Chapter 3 tackles submillimeter solid-state physics, and Chapter 4 reviews the theory of infrared and far-infrared free-carrier behavior in semiconductors. The improvements in pyroelectric detectors are then reviewed. The sixth chapter discusses cyclotron and Zeeman transitions in photoexcited semiconductors at far infrared, while the seventh chapter discusses high temperature infrared reflectivity spectroscopy. Chapter 8 covers millimeter and submillimeter waves' interaction with giant atoms. The last chapter is about spectroscopy of InAs-GaSb layered structures.
This book will be of great use to researchers or professionals whose work involves infrared and millimeter waves.

List of ContributorsPrefaceContents of Other VolumesChapter 1 Properties of Dielectric Materials I. Introduction II. The Macroscopic Theory III. The Microscopic Theory IV. Experimental Methods V. Some Illustrative Examples of Submillimeter Dielectric Measurements ReferencesChapter 2 Far-Infrared Spectroscopy on High Polymers I. Introduction II. High Polymers III. Dispersion Relations IV. Applications V. Conclusion ReferencesChapter 3 Submillimeter Solid-State Physics I. Introduction II. Survey of Experimental Methods III. Submillimeter Semiconductor Physics IV. Submillimeter Superconductor Physics V. Submillimeter Semiconductor Characterization VI. Summary: Recent Work and Future Projections ReferencesChapter 4 Review of the Theory of Infrared and Far-Infrared Free-Carrier Behavior in Semiconductors I. Introduction II. Theoretical Results III. Polar Scattering IV. Formulation in Terms of a Cross Section V. Formulation in Terms of a Relaxation Time VI. Impurity Scattering VII. Impurity Scattering at High Concentrations and Low Temperatures VIII. Comparison with Experimental Results Appendix A. Theory Appendix B. Summary of Theoretical Results Appendix C. The Angle Averaged Matrix Element for Polar Scattering Appendix D. Angle-Averaged Matrix Element for Impurity Scattering ReferencesChapter 5 Review of Recent Improvements in Pyroelectric Detectors I. Introduction II. Epitaxial Face-Electrode Detectors III. Edge-Electrode Detectors IV. New Ferroelectrics V. Better Use of Pyroelectric Materials VI. Comparison with Quantum Detectors VII. Conclusion ReferencesChapter 6 Cyclotron and Zeeman Transitions in Photoexcited Semiconductors at Far Infrared I. Introduction II. Experimental Arrangements III. Hot Carrier Experiments in InSb IV. Carrier Dynamics in GaAs V. Exciton Dynamics in Si VI. Concluding Remarks ReferencesChapter 7 High-Temperature Infrared Reflectivity Spectroscopy by Scanning Interferometry I. Introduction II. Interaction of Infrared Electromagnetic Field and Crystalline Solids III. Phonon Self-Energy, Theory and Practice IV. Dielectric Function Models V. Reflectivity Spectroscopy with a Scanning Interferometer VI. Examples of Applications ReferencesChapter 8 Millimeter and Submillimeter Waves Interacting with Giant Atoms (Rydberg States) I. Introduction II. One-Electron Rydberg Atoms III. Experimental Aspects IV. Millimeter Spectroscopy in Rydberg States of Sodium and Cesium V. Blackbody Detection VI. The Rydberg Maser ReferencesChapter 9 Far-Infrared Spectroscopy of InAs-GaSb Layered Structures I. Introduction II. InAs-GaSb Superlattices III. Experimental Results of InAs-GaSb Superlattices IV. The InAs-GaSb Heterojunction V. Summary and Conclusions ReferencesIndex