SIMOX represents the first effort to compile a broad spectrum of knowledge from various groups of researchers and technologists in the world. It provides the reader with a basic understanding of SIMOX technology and in addition gives a good starting point for further investigation and applications.

• Chapter 1: Introduction


• Chapter 2: Overview of SIMOX technology: historical perspective


• Chapter 3: Fundamental processes in SIMOX layer formation: ion implantation and oxide growth


• Chapter 4: SIMOX/SOI processes: flexibility based on thermodynamic considerations


• Chapter 5: Electrical and optical characterisation of SIMOX substrates


• Chapter 6: SIMOX material technology from R&D to advanced products

Katsutoshi Izumi received an M.S. degree in electrical engineering from Nagoya Institute of Technology in 1972 and a Ph.D. degree in electronics from Tokyo Institute of Technology in 1988. After joining the Musashino Electrical Communication Laboratory, NTT, in 1972, he performed research mainly on SOI technology for CMOS LSIs. He invented the SIMOX in 1976, and succeeded in fabricating CMOS/SIMOX ICs for the first time in 1978. He is presently working in the field of a new composite semiconductor material for Electron-Photon-Merged devices as a professor in the Research Institute for Advanced Science and Technology at Osaka Prefecture University.