Bültmann & Gerriets
Preparation and Properties of Thin Films
Treatise on Materials Science and Technology, Vol. 24
von K. N. Tu, R. Rosenberg
Verlag: Elsevier Science & Techn.
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ISBN: 978-1-4832-1829-8
Erschienen am 22.10.2013
Sprache: Englisch
Umfang: 350 Seiten

Preis: 54,95 €

54,95 €
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Inhaltsverzeichnis

Treatise on Materials Science and Technology, Volume 24: Preparation and Properties of Thin Films covers the progress made in the preparation of thin films and the corresponding study of their properties. The book discusses the preparation and property correlations in thin film; the variation of microstructure of thin films; and the molecular beam epitaxy of superlattices in thin film. The text also describes the epitaxial growth of silicon structures (thermal-, laser-, and electron-beam-induced); the characterization of grain boundaries in bicrystalline thin films; and the mechanical properties of thin films on substrates. The ion beam modification of thin film; the use of thin alloy films for metallization in microelectronic devices; and the fabrication and physical properties of ultrasmall structures are also encompassed. Materials scientists and materials engineers will find the book invaluable.



ContributorsPrefacePart I. Introduction 1 Preparation and Property Correlations in Thin FilmsPart II. Variation Of Microstructure Of Thin Films 2 Molecular Beam Epitaxy of Superlattices in Thin Films I. Introduction II. Molecular Beam Epitaxy III. Structure of Semiconductor Superlattices IV. Properties of Superlattice Structures V. Concluding Remarks References 3 Epitaxial Growth of Silicon Structures-Thermal, Laser-, and Electron-Beam-Induced I. Introduction II. Thermal and Laser-Induced Epitaxy: Implanted-Amorphous Silicon III. Deposited Layers of Silicon on Silicon IV. Epitaxial Suicides V. Crystallization of Deposited Films VI. Summary References 4 Characterization of Grain Boundaries in Bicrystalline Thin Films I. Introduction II. Structure of Grain Boundaries III. Properties of Grain Boundaries IV. Preparation of Bicrystalline Thin Films V. Characterization of Grain Boundary Structure VI. Recent Experimental Results VII. Summary VIII. Perspective References 5 Mechanical Properties of Thin Films on Substrates I.Introduction II.Biaxial Strain Model III.Strain Relaxation Mechanisms IV.Strain Relaxation by Dislocation Glide V.Strain Relaxation by Diffusional Creep VI.Strain at Grain Boundaries VII.Strain and Stress at Film Edges VIII.Microstructures Which Affect Mechanical Properties of Thin Films IX.Application ReferencesPart III. Variation Of Composition Of Thin Films 6 Ion Beam Modification of Thin Films I. Introduction II. Range and Energy Deposition III. Sputtering-Induced Compositional Changes IV Implanted Metastable Phases V. Ion-Beam-Induced Reactions of Metal Films References 7 Thin Alloy Films for Metallization in Microelectronic Devices I. Introduction II. Metallurgical Degradation in Microelectronic Devices III. Near-Equilibrium Multilayered Thin-Film Structure IV Applications of Thin Alloy Films in Forming Shallow Suicide Contacts V. Conclusion ReferencesPart Iv Variation Of Pattern Of Thin Films 8 Fabrication and Physical Properties of Ultrasmall Structures I. Introduction II. Fabrication III. Physical Properties IV. Summary ReferencesIndex