Treatise on Materials Science and Technology, Volume 27: Analytical Techniques for Thin Films covers a set of analytical techniques developed for thin films and interfaces, all based on scattering and excitation phenomena and theories. The book discusses photon beam and X-ray techniques; electron beam techniques; and ion beam techniques. Materials scientists, materials engineers, chemical engineers, and physicists will find the book invaluable.

ContributorsPrefacePart I. Introduction 1 Submicron Structure and Microanalysis I. Introduction II. Submicron Structure III. Microanalysis IV. Chapter Synopses Part II. Photon Beam and X-Ray Techniques 2 Synchronotron Radiation Photoemission Studies of Interfaces I. Statement of Purpose II. Introduction III. Synchronotron Radiation Photoemission IV. Case Studies V. Concluding Remarks Notes 3 Esca I. Introduction II. Instrumentation and Experimental Considerations III. Surface Sensitivity IV. Quantitative Analysis V. Depth Profiling VI. Chemical Shifts and Solid State Screening VII. Surface and Interface Segregation VIII. Line Widths and Line Shapes IX. Auger Spectra X. Valence Electron Spectra Summary References 4 Modern Developments in Soft X-Ray Imaging I. Introduction II. Soft X-Ray Sources III. Resolution IV. Potential Applications in Materials Science References 5 X-Ray Diffraction Analysis of Strains and Stresses in Thin Films I. Introduction II. Strain-Stress Relations III. X-Ray Diffraction Techniques IV. Summary Appendix A. Tensor Transformations and Matrix Notation Appendix B. Relations between Stiffnesses and Compliances References 6 X-Ray Diffraction Analysis of Diffusion in Thin Films I. Introduction II. Diffusion Equations III. X-Ray Diffraction Analysis IV. Summary References Part III. Electron Beam Techniques 7 Cross-Sectional Transmission Electron Microscopy of Electronic and Photonic Devices I. Epoxy-Embedding Technique II. TEM Cross Section Sample Preparation Technique for III-V Compound Semiconductor Device Materials by Chemical Thinning III. Pre-ion-Milling Etch and Pre-ion-Milling Drill Techniques IV. Glass Sealing Cross-Section TEM Sample Preparation V. Feature Enhancement VI. TEM Test Pattern VII. Future Trends and Summary References 8 High-Resolution Transmission Electron Microscopy of Surfaces and Interfaces I. Introduction II. Lattice Imaging III. Diffraction Contrast Techniques IV. Surfaces V. Current Developments References 9 Scanning Transmission Electron Microscopy I. Introduction II. Stem Electron Optics III. Common Analytical Techniques IV. Energy-Filtered Imaging V. High-Resolution Energy-Loss Studies VI. Property-Dependent Techniques VII. Computer Interaction with the Stem VIII. Conclusions ReferencesPart IV. Ion Beam Techniques 10 Rutherford Backscattering Spectrometry on Thin Solid Films I.Introduction II.Basic Concepts of Rutherford Backscattering Spectrometry III.Elemental Composition and Depth Profiling: Applications and Examples IV.Microbeam Applications V.Concepts of Channeling VI.Epitaxial Thin-Film Applications VII.Superlattices VIII.Surface-Structure Studies References 11 The Atomic Structure and Atomic Layer Compositional Analysis of Thin Solid Films Using the Time-of-Flight Atom-probe Field Ion Microscopy I.Introduction II.Method of Absolute Composition Depth Profiling in the Atom-probe III.Instrumentation IV.Applications to Surface-layer Analysis V.Concluding Remarks ReferencesIndex